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TSML1000 - High Power Infrared Emitting Diode

General Description

TSML1000 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a clear, untinted plastic package (with lens) for surface mounting (SMD).

Key Features

  • Package type: surface-mount.
  • Package form: GW, RGW, yoke, axial.
  • Dimensions (L x W x H in mm): 2.5 x 2 x 2.7.
  • Peak wavelength: λp = 940 nm.
  • High radiant power.
  • High radiant intensity.
  • Angle of half intensity: ϕ = ± 12°.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • Good spectral matching with Si photodetectors.
  • Versatile terminal configurations.
  • Package matches with dete.

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Datasheet Details

Part number TSML1000
Manufacturer Vishay
File Size 159.42 KB
Description High Power Infrared Emitting Diode
Datasheet download datasheet TSML1000 Datasheet

Full PDF Text Transcription (Reference)

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TSML1000, TSML1020, TSML1030, TSML1040 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW TSML1000 TSML1020 TSML1030 TSML1040 16852 DESCRIPTION TSML1000 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a clear, untinted plastic package (with lens) for surface mounting (SMD). FEATURES • Package type: surface-mount • Package form: GW, RGW, yoke, axial • Dimensions (L x W x H in mm): 2.5 x 2 x 2.