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TSPF6200 - High Power Infrared Emitting Diode

Description

TSPF6200 is an infrared, 890 nm emitting diode in GaAlAs / double hetero (DH) technology with high radiant power, high speed, and with typical receiving characteristics, TSPF6200 is molded in a blue gray tinted plastic package.

Features

  • Package type: leaded.
  • Package form: T-1¾.
  • Dimensions (in mm): Ø 5.
  • Peak wavelength: λp = 890 nm.
  • High reliability.
  • High radiant power.
  • High radiant intensity.
  • Angle of half intensity: ϕ = ± 22°.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • Good spectral matching with Si photodetectors.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?.

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Datasheet preview – TSPF6200

Datasheet Details

Part number TSPF6200
Manufacturer Vishay
File Size 110.31 KB
Description High Power Infrared Emitting Diode
Datasheet download datasheet TSPF6200 Datasheet
Additional preview pages of the TSPF6200 datasheet.

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    End of Life - Last Available Purchase Date: 31-December-2021 www.vishay.com TSPF6200 Vishay Semiconductors High Power Infrared Emitting Diode, 890 nm, GaAlAs / Double Hetero 94 8389 DESCRIPTION TSPF6200 is an infrared, 890 nm emitting diode in GaAlAs / double hetero (DH) technology with high radiant power, high speed, and with typical receiving characteristics, TSPF6200 is molded in a blue gray tinted plastic package.
    Published: |