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TV050B...S4PT Series
Vishay General Semiconductor
PAR® Transient Voltage Suppressor Bare Die (50 mils x 50 mils)
a ce
db
A (2) C (1)
FEATURES
• Junction passivation optimized design passivated anisotropic rectifier technology
• 300 W (6.8 V to 9.1 V), 400 W (10 V to 43 V) peak pulse power capability with a 10/1000 μs waveform in equivalent package
• Unidirectional polarity only
CIRCUIT DIAGRAM
A (2)
Notes (1) Front metallization side: Cathode (2) Back metallization side: Anode
C (1)
MECHANICAL DATA
DIMENSIONS in inches (millimeters)
TYPICAL TOTAL METAL THICKNESS
DEVICE (1)
ASSEMBLY
CHIP SIZE
SOLDERABLE
CHIP THICKNESS
FRONT SIDE C
BACK SIDE A
a, b min. max.
c, d min. max.
e METAL THICKNESS METAL THICKNESS
min. max.
TV050B...S4PT
0.048 0.050 0.039 0.041 0.