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TV050B6P8S4PT - Transient Voltage Suppressor

Features

  • Junction passivation optimized design passivated anisotropic rectifier technology.
  • 300 W (6.8 V to 9.1 V), 400 W (10 V to 43 V) peak pulse power capability with a 10/1000 μs waveform in equivalent package.
  • Unidirectional polarity only.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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New Product TV050B...S4PT Series Vishay General Semiconductor PAR® Transient Voltage Suppressor Bare Die (50 mils x 50 mils) a ce db A (2) C (1) FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • 300 W (6.8 V to 9.1 V), 400 W (10 V to 43 V) peak pulse power capability with a 10/1000 μs waveform in equivalent package • Unidirectional polarity only CIRCUIT DIAGRAM A (2) Notes (1) Front metallization side: Cathode (2) Back metallization side: Anode C (1) MECHANICAL DATA DIMENSIONS in inches (millimeters) TYPICAL TOTAL METAL THICKNESS DEVICE (1) ASSEMBLY CHIP SIZE SOLDERABLE CHIP THICKNESS FRONT SIDE C BACK SIDE A a, b min. max. c, d min. max. e METAL THICKNESS METAL THICKNESS min. max. TV050B...S4PT 0.048 0.050 0.039 0.041 0.
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