Datasheet4U Logo Datasheet4U.com

TV050B8P2S4PT - Transient Voltage Suppressor

Download the TV050B8P2S4PT datasheet PDF. This datasheet also covers the TV050B6P8S4PT variant, as both devices belong to the same transient voltage suppressor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Junction passivation optimized design passivated anisotropic rectifier technology.
  • 300 W (6.8 V to 9.1 V), 400 W (10 V to 43 V) peak pulse power capability with a 10/1000 μs waveform in equivalent package.
  • Unidirectional polarity only.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TV050B6P8S4PT-Vishay.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
TV00570002CDGB MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba
TV00570003CDGB MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba
TV045 Temperature Compensated Crystal Oscillator RAMI TECHNOLOGY
TV04A100J SMD Transient Voltage Suppressor Comchip Technology
TV04A100J-G SMD Transient Voltage Suppressor Comchip Technology

Other Datasheets by Vishay

Part Number Description
TV050B010S4PT Transient Voltage Suppressor
TV050B011S4PT Transient Voltage Suppressor
TV050B012S4PT Transient Voltage Suppressor
TV050B013S4PT Transient Voltage Suppressor
TV050B015S4PT Transient Voltage Suppressor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
New Product TV050B...S4PT Series Vishay General Semiconductor PAR® Transient Voltage Suppressor Bare Die (50 mils x 50 mils) a ce db A (2) C (1) FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • 300 W (6.8 V to 9.1 V), 400 W (10 V to 43 V) peak pulse power capability with a 10/1000 μs waveform in equivalent package • Unidirectional polarity only CIRCUIT DIAGRAM A (2) Notes (1) Front metallization side: Cathode (2) Back metallization side: Anode C (1) MECHANICAL DATA DIMENSIONS in inches (millimeters) TYPICAL TOTAL METAL THICKNESS DEVICE (1) ASSEMBLY CHIP SIZE SOLDERABLE CHIP THICKNESS FRONT SIDE C BACK SIDE A a, b min. max. c, d min. max. e METAL THICKNESS METAL THICKNESS min. max. TV050B...S4PT 0.048 0.050 0.039 0.041 0.
Published: |