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V10150C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Vishay

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V10150C Dual High-Voltage Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – V10150C

Datasheet Details

Part number	V10150C
Manufacturer	Vishay
File Size	132.76 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V10150C Datasheet
Additional preview pages of the V10150C datasheet.

Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Published: Mar 28, 2012 |