Datasheet4U Logo Datasheet4U.com

V10D45C Datasheet Dual Low-voltage Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: .vishay. V10D45C Vishay General Semiconductor Dual Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.34 V at IF = 2.

Datasheet Details

Part number V10D45C
Manufacturer Vishay
File Size 119.44 KB
Description Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet V10D45C-Vishay.pdf

Key Features

  • Trench MOS Schottky technology Available.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYPICA.

More Datasheets from Vishay

Part Number Description
V10D100C Dual High Voltage (Trench MOS Barrier Schottky Rectifier
V10D100C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D100CHM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D120C Trench MOS Barrier Schottky Rectifier
V10D120C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D120CHM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D170C Trench MOS Barrier Schottky Rectifier
V10D202C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D60C Dual Trench MOS Barrier Schottky Rectifier
V10DM100C Trench MOS Barrier Schottky Rectifier

V10D45C Distributor