Vishay V10D60C
Dual Trench MOS Barrier Schottky Rectifier
| Part No. | V10D60C |
|---|---|
| Datasheet | V10D60C Download |
| Manufacturer |  Vishay |
| Description | Dual Trench MOS Barrier Schottky Rectifier |
| Buy | Stock & Price |
FEATURES
● Trench MOS Schottky technology Available● Very low profile - typical height of 1.7 mm
● Ideal for automated placement
● Low forward voltage drop, low power losses
● High efficiency operation
● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
● AEC-Q101 qualified available - Automotive ordering code; base P/NHM3
● Material categorization: for definitions of compliance please see
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. Package 2 x 5.0 A 60 V 100 A 0.50 V 150 °C SMPD (TO-263AC) Circuit configuration Common cathodeMECHANICAL DATA
Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....) Termin...
