Full PDF Text Transcription for V10D60C (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
V10D60C. For precise diagrams, and layout, please refer to the original PDF.
www.vishay.com V10D60C Vishay General Semiconductor Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A eSMP® Series SMPD (TO-263AC) K ...
View more extracted text
er Ultra Low VF = 0.39 V at IF = 2.5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View Anode 1 Anode 2 K Cathode ADDITIONAL RESOURCES 3D 3D 3D Models FEATURES • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.
V10D60C Datasheet
