• Part: V10D60C
  • Description: Dual Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 119.42 KB
V10D60C Datasheet (PDF) Download
Vishay
V10D60C

Key Features

  • Trench MOS Schottky technology Available
  • Very low profile - typical height of 1.7 mm
  • Ideal for automated placement
  • Low forward voltage drop, low power losses
  • High efficiency operation
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
  • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3
  • Material categorization: for definitions of pliance please see .vishay./doc?99912