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V10K60DU - Trench MOS Barrier Schottky Rectifier

Key Features

  • Trench MOS Schottky technology Available.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number V10K60DU
Manufacturer Vishay
File Size 131.02 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V10K60DU Datasheet

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www.vishay.com V10K60DU Vishay General Semiconductor High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A 8 7 6 5 FlatPAK 5 x 6 1 and / or 2 3 and / or 4 7, 8 5, 6 1 2 3 4 DESIGN SUPPORT TOOLS click logo to get started FEATURES • Trench MOS Schottky technology Available • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications.