Vishay V10PM12HM3
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
| Part No. | V10PM12HM3 |
|---|---|
| Datasheet | V10PM12HM3 Download |
| Manufacturer |  Vishay |
| Description | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
| Buy | Stock & Price |
FEATURES
● Very low profile - typical height of 1.1 mm Available● Ideal for automated placement
● Trench MOS Schottky technology
● Low forward voltage drop, low power losses
● High efficiency operation
● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
● AEC-Q101 qualified
● Material categorization: For definitions of compliance please see
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package 10 A 120 V 160 A 0.63 V 150 °C TO-277A (SMPC) Diode variation Single dieMECHANICAL DATA
Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 20...
