Datasheet4U Logo Datasheet4U.com

V10PN50-M3 - Trench MOS Barrier Schottky Rectifier

Datasheet Summary

Features

  • Very low profile - typical height of 1.1 mm.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Datasheet preview – V10PN50-M3

Datasheet Details

Part number V10PN50-M3
Manufacturer Vishay
File Size 101.22 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V10PN50-M3 Datasheet
Additional preview pages of the V10PN50-M3 datasheet.

📁 Similar Datasheet

  • V10P11P - Metal-Oxide Varistors (Littelfuse)
  • V10P130AUTO - Metal-Oxide Varistors (Littelfuse)
  • V10P140AUTO - Metal-Oxide Varistors (Littelfuse)
  • V10P14AUTO - Metal-Oxide Varistors (Littelfuse)
  • V10P14P - Metal-Oxide Varistors (Littelfuse)
  • V10P150AUTO - Metal-Oxide Varistors (Littelfuse)
  • V10P175AUTO - Metal-Oxide Varistors (Littelfuse)
  • V10P17AUTO - Metal-Oxide Varistors (Littelfuse)
  • V10P17P - Metal-Oxide Varistors (Littelfuse)
  • V10P20AUTO - Metal-Oxide Varistors (Littelfuse)
Other Datasheets by Vishay
  • V10P10 - Trench MOS Barrier Schottky Rectifier
  • V10P12 - Trench MOS Barrier Schottky Rectifier
  • V10P15 - Trench MOS Barrier Schottky Rectifier
  • V10P20 - Trench MOS Barrier Schottky Rectifier
  • V10P45 - Trench MOS Barrier Schottky Rectifier
  • V10P45S - SMD Photovoltaic Solar Cell Protection Schottky Rectifier
  • V10P45S-M3 - Trench MOS Barrier Schottky Rectifier
  • V10P6 - Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription

Click to expand full text
www.vishay.com V10PN50-M3 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.30 V at IF = 5 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 DESIGN SUPPORT TOOLS click logo to get started FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications.
Published: |