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V10PWL45C - Trench MOS Barrier Schottky Rectifier

Datasheet Summary

Features

  • Very low profile - typical height of 1.3 mm Available.
  • Trench MOS Schottky technology.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 LINKS.

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Datasheet Details

Part number V10PWL45C
Manufacturer Vishay
File Size 134.02 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V10PWL45C Datasheet
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Full PDF Text Transcription

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www.vishay.com V10PWL45C Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.31 V at IF = 2.5 A eSMP® Series K 1 2 SlimDPAK (TO-252AE) PIN 1 PIN 2 K HEATSINK FEATURES • Very low profile - typical height of 1.3 mm Available • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.
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