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V10PWL45C Datasheet

Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Datasheet Details

Part number V10PWL45C
Manufacturer Vishay
File Size 134.02 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet V10PWL45C-Vishay.pdf

V10PWL45C Overview

V10PWL45C Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.31 V at IF = 2.5 A eSMP® Series K 1 2 SlimDPAK (TO-252AE) PIN 1 PIN 2 K HEATSINK.

V10PWL45C Key Features

  • Very low profile
  • typical height of 1.3 mm
  • Trench MOS Schottky technology
  • Ideal for automated placement
  • Low forward voltage drop, low power losses
  • High efficiency operation
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
  • AEC-Q101 qualified available
  • Automotive ordering code: base P/NHM3
  • Material categorization: for definitions of pliance please see .vishay./doc?99912

V10PWL45C Distributor