• Part: V10PWL45C
  • Description: Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 134.02 KB
Download V10PWL45C Datasheet PDF
Vishay
V10PWL45C
FEATURES - Very low profile - typical height of 1.3 mm Available - Trench MOS Schottky technology - Ideal for automated placement - Low forward voltage drop, low power losses - High efficiency operation - Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C - AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 - Material categorization: for definitions of pliance please see .vishay./doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) 2x5A VRRM IFSM VF at IF = 5 A (TJ = 125 °C) 45 V 80 A 0.38 V TJ max. Package 150 °C Slim DPAK (TO-252AE) Circuit configuration mon cathode TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. MECHANICAL DATA Case: Slim DPAK (TO-252AE) Molding pound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, Ro HS-pliant Base P/NHM3 - halogen-free, Ro HS-pliant, and AEC-Q101 qualified Terminals:...