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V10WM100-M3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.48 V at IF = 5 A
TMBS®
TO-252 (D-PAK)
K
NC
A V10WM100
FEATURES • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
NC
K
A
HEATSINK
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
100 V
IFSM
180 A
VF at IF = 10 A (TA = 125 °C) TJ max.
0.
V10WM100-M3 Datasheet
