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V10WM100-M3 - Trench MOS Barrier Schottky Rectifier

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Vishay

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V10WM100-M3 Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – V10WM100-M3

Datasheet Details

Part number	V10WM100-M3
Manufacturer	Vishay
File Size	122.62 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V10WM100-M3 Datasheet
Additional preview pages of the V10WM100-M3 datasheet.

Product details

Features

Trench MOS Schottky technology.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 NC K A.

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Published: Jun 8, 2020 |