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V10WM100-M3 Datasheet

Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Datasheet Details

Part number V10WM100-M3
Manufacturer Vishay
File Size 122.62 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet V10WM100-M3-Vishay.pdf

V10WM100-M3 Overview

V10WM100-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 5 A TMBS® TO-252 (D-PAK) K NC A V10WM100.

V10WM100-M3 Key Features

  • Trench MOS Schottky technology
  • Ideal for automated placement
  • Low forward voltage drop, low power losses
  • High efficiency operation
  • Meets MSL level 1, per J-STD-020, LF maximum peak
  • Material categorization: For definitions of pliance

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V10WM100-M3 Distributor