V12P12 Description
V12P12 Vishay General Semiconductor High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.51 V at IF = 6 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode.
V12P12 Key Features
- Very low profile
- typical height of 1.1 mm
- Ideal for automated placement
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
- Material categorization: for definitions of pliance please see .vishay./doc?99912