• Part: V12PM12HM3
  • Description: High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 93.07 KB
Download V12PM12HM3 Datasheet PDF
Vishay
V12PM12HM3
V12PM12HM3 is High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
- Part of the V12PM12-M3 comparator family.
.vishay. V12PM12-M3, V12PM12HM3 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 6 A TMBS® eSMP® Series 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 Features - Very low profile - typical height of 1.1 mm Available - Ideal for automated placement - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C - AEC-Q101 qualified - Material categorization: For definitions of pliance please see .vishay./doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency...