V20D202C Datasheet PDF (Dual High-Voltage Trench MOS Barrier Schottky Rectifier)

V20D202C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

Trench MOS Schottky technology generation 2 Available.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TY.

Datasheet Details

Part number	V20D202C
Manufacturer	Vishay
File Size	118.33 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V20D202C Datasheet
Additional preview pages of the V20D202C datasheet.

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Full PDF Text Transcription

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www.vishay.com V20D202C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View V20D202C PIN 1 K PIN 2 HEATSINK ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) 2 x 10.0 A VRRM 200 V IFSM 150 A VF at IF = 10.0 A (TA = 125 °C) TJ max. 0.68 V 175 °C Package SMPD (TO-263AC) Circuit configuration Common cathode FEATURES • Trench MOS Schottky technology generation 2 Available • Very low profile - typical height of 1.

Published: Aug 22, 2017 |