• Part: V20DM120C-M3
  • Description: Dual Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 115.83 KB
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Vishay
V20DM120C-M3
V20DM120C-M3 is Dual Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
.vishay. V20DM120C-M3, V20DM120CHM3 Vishay General Semiconductor Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.55 V at IF = 5 A eSMP® Series SMPD (TO-263AC) 2 Top View Bottom View Anode 1 Anode 2 K Cathode DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models Features - Trench MOS Schottky technology - Very low profile - typical height of 1.7 mm - Ideal for automated placement - Low forward voltage drop, low power losses - High efficiency operation - Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C - AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 - Material categorization: for definitions of pliance please see...