V20DM120C-M3 Datasheet PDF (Dual Trench MOS Barrier Schottky Rectifier)

V20DM120C-M3 - Dual Trench MOS Barrier Schottky Rectifier

Features

Trench MOS Schottky technology.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Datasheet Details

Part number	V20DM120C-M3
Manufacturer	Vishay
File Size	115.83 KB
Description	Dual Trench MOS Barrier Schottky Rectifier
Datasheet	V20DM120C-M3 Datasheet
Additional preview pages of the V20DM120C-M3 datasheet.

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Full PDF Text Transcription

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www.vishay.com V20DM120C-M3, V20DM120CHM3 Vishay General Semiconductor Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.55 V at IF = 5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View Anode 1 Anode 2 K Cathode DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.

Published: Aug 22, 2017 |