• Part: V20M100M-E3
  • Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 96.07 KB
V20M100M-E3 Datasheet (PDF) Download
Vishay
V20M100M-E3

Key Features

  • Trench MOS Schottky technology
  • Low forward voltage drop, low power losses
  • High efficiency operation
  • Solder dip 275 °C max. 10 s, per JESD 22-B106
  • Material categorization: for definitions of pliance please see .vishay./doc?99912 V20M100M PIN 1 PIN 3 PIN 2 CASE