Full PDF Text Transcription for V20WL45-M3 (Reference)
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www.vishay.com V20WL45-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5 A TMBS® TO-252 (D-PAK) K NC A V20WL45 NC K A ...
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ow VF = 0.30 V at IF = 5 A TMBS® TO-252 (D-PAK) K NC A V20WL45 NC K A HEATSINK FEATURES • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 45 V IFSM VF at IF = 20 A (TA = 125 °C) 180 A 0.48
V20WL45-M3 Datasheet
