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V20WL45-M3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.30 V at IF = 5 A
TMBS®
TO-252 (D-PAK)
K
NC
A V20WL45
NC K A HEATSINK
FEATURES • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
45 V
IFSM VF at IF = 20 A (TA = 125 °C)
180 A 0.48 V
TJ max.
V20WL45-M3 Datasheet
