V25PN60 - Trench MOS Barrier Schottky Rectifier

Features

Very low profile - typical height of 1.1 mm.
Ideal for automated placement.
Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	V25PN60
Manufacturer	Vishay
File Size	95.26 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V25PN60 Datasheet
Additional preview pages of the V25PN60 datasheet.

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V25PL60-M3 - Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription

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www.vishay.com V25PN60 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.25 V at IF = 5 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 25 A VRRM 60 V IFSM 300 A VF at IF = 25 A (TA = 125 °C) 0.45 V TJ max. Package 150 °C SMPC (TO-277A) Circuit configuration Single FEATURES • Very low profile - typical height of 1.

Published: Jun 8, 2020 |