V2FL45 - Trench MOS Barrier Schottky Rectifier

Features

Trench MOS Schottky technology Available.
Low profile package.
Ideal for automated placement.
Low forward voltage drop, low power losses.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
Wave and reflow solderable.
AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	V2FL45
Manufacturer	Vishay
File Size	101.02 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V2FL45 Datasheet
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www.vishay.com V2FL45 Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifiers eSMP® Series Top view Bottom view SMF (DO-219AB) Cathode Anode ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM IFSM 45 V 40 A VF at IF = 2 A (TA = 125 °C) 0.40 V TJ max. 150 °C Package SMF (DO-219AB) Circuit configuration Single FEATURES • Trench MOS Schottky technology Available • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Wave and reflow solderable • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.

Published: May 4, 2020 |