V2PL45 - Surface Mount Trench MOS Barrier Schottky Rectifier

Features

Very low profile - typical height of 0.65 mm Available.
Ideal for automated placement.
Trench MOS Schottky technology.
Low forward voltage drop.
Low power loss, high efficiency.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	V2PL45
Manufacturer	Vishay
File Size	101.62 KB
Description	Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet	V2PL45 Datasheet
Additional preview pages of the V2PL45 datasheet.

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Full PDF Text Transcription

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www.vishay.com V2PL45 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® eSMP® Series Top View Bottom View MicroSMP (DO-219AD) Anode Cathode DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 2A VRRM 45 V IFSM 30 A VF at IF = 2 A (125 °C) TJ max. 0.40 V 150 °C Package MicroSMP (DO-219AD) Circuit configuration Single FEATURES • Very low profile - typical height of 0.

Published: Jun 4, 2019 |