Vishay V30120C
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
| Part No. | V30120C |
|---|---|
| Datasheet | V30120C Download |
| Manufacturer |  Vishay |
| Description | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| Buy | Stock & Price |
FEATURES
● Trench MOS Schottky technology● Low forward voltage drop, low power losses
● High efficiency operation
● Solder dip 275 °C max. 10 s, per JESD 22-B106
● Material categorization: for definitions of compliance please see
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2 x 15 A 120 V 150 A VF at IF = 15 A 0.68 V TJ max. Package 150 °C TO-220AB, TO-262AA Diode variation Common cathodeMECHANICAL DATA
Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-com
