• Part: V30D202C
  • Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 117.45 KB
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Vishay
V30D202C
V30D202C is Dual High-Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
.vishay. Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series SMPD (TO-263AC) 2 Top View Bottom View PIN 1 PIN 2 HEATSINK ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) 2 x 15.0 A VRRM IFSM VF at IF = 15.0 A (TA = 125 °C) 200 V 260 A 0.66 V TJ max. 175 °C Package SMPD (TO-263AC) Circuit configuration mon cathode Features - Trench MOS Schottky technology generation 2 Available - Very low profile - typical height of 1.7 mm - Ideal for automated placement - Low forward voltage drop, low power losses - High efficiency operation - Meets MSL level 1, per J-STD-020, LF...