V3FL45 Description
V3FL45 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifiers TMBS® eSMP® Series Top view Bottom view SMF (DO-219AB) Cathode Anode DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 3.0 A 45 V 50 A VF at IF = 2 A (TA = 125 °C) 0.43 V TJ max. Package 150 °C SMF (DO-219AB) Circuit configuration Single.
V3FL45 Key Features
- Trench MOS Schottky technology
- Low profile package
- Ideal for automated placement
- Low forward voltage drop, low power losses
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- Wave and reflow solderable
- AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
- Material categorization: for definitions of pliance please see .vishay./doc?99912