Vishay V40DL45BP
Trench MOS Barrier Schottky Rectifier
| Part No. | V40DL45BP |
|---|---|
| Datasheet | V40DL45BP Download |
| Manufacturer |  Vishay |
| Description | Trench MOS Barrier Schottky Rectifier |
| Buy | Stock & Price |
FEATURES
● Trench MOS Schottky technology● Very low profile - typical height of 1.7 mm
● Ideal for automated placement
● Low forward voltage drop, low power losses
● High efficiency operation
● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
● Material categorization: for definitions of compliance please see Anode 1 Anode 2 K Cathode DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 40 A (TA = 125 °C) TOP max. (AC model) TJ max. (DC forward current) Package 40 A 45 V 240 A 0.53 V 150 °C 200 °C SMPD (TO-263AC) Circuit configuration Single
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.MECHANICAL DATA
Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 2...
