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V40DM120CHM3 Datasheet Dual High Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

Download the V40DM120CHM3 datasheet PDF. This datasheet also includes the V40DM120C-M3 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (V40DM120C-M3-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number V40DM120CHM3
Manufacturer Vishay
File Size 119.15 KB
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Download V40DM120CHM3 Download (PDF)

Overview

www.vishay.com V40DM120C-M3, V40DM120CHM3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V40DM120C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 20 A VRRM 120 V IFSM VF at IF = 20 A (TA = 125 °C) TJ max.

250 A 0.

Key Features

  • Trench MOS Schottky technology.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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