Datasheet4U Logo Datasheet4U.com

V40M120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Datasheet Summary

Features

  • Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS TO-220AB ®.
  • Trench MOS Schottky technology TO-262AA.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 definition K 2 V40M120C PIN 1 PIN 3 3 1 VI40M120C PIN 1 PIN 3 2 3 1 PIN 2 CASE TYPIC.

📥 Download Datasheet

Datasheet preview – V40M120C

Datasheet Details

Part number V40M120C
Manufacturer Vishay
File Size 783.78 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V40M120C Datasheet
Additional preview pages of the V40M120C datasheet.
Other Datasheets by Vishay

Full PDF Text Transcription

Click to expand full text
New Product V40M120C, VI40M120C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.46 V at IF = 5 A FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS TO-220AB ® • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition K 2 V40M120C PIN 1 PIN 3 3 1 VI40M120C PIN 1 PIN 3 2 3 1 PIN 2 CASE TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
Published: |