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V40M150C-M3, V40M150CHM3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.55 V at IF = 5 A
TMBS ®
TO-220AB
V40M150C
3 2 1
PIN 1
K
PIN 2
CASE
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 20 A (TA = 125 °C) TJ max. Package
2 x 20 A 150 V 160 A 0.
V40M150C-M3 Datasheet
