V40PW45C - Trench MOS Barrier Schottky Rectifier

Vishay

Key Features

Very low profile - typical height of 1.3 mm Available.
Trench MOS Schottky technology.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYPICA.

V40PW45C trench mos barrier schottky rectifier by Vishay - Datasheet Preview

Datasheet Details

Part number	V40PW45C
Manufacturer	Vishay
File Size	128.47 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V40PW45C Datasheet

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www.vishay.com V40PW45C Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.33 V at IF = 5 A eSMP® Series 1 2 SlimDPAK (TO-252AE) PIN 1 K PIN 2 HEATSINK ADDITIONAL RESOURCES 3D 3D 3D Models K FEATURES • Very low profile - typical height of 1.3 mm Available • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.