V6KM120DU Description
.vishay. V6KM120DU Vishay General Semiconductor High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.51 V at IF = 1.5 A 8 7 6 5 FlatPAK 5 x 6 1 and / or 2 3 and / or 4 7, 8 5, 6 1 2 3 4 DESIGN SUPPORT TOOLS click logo to.
V6KM120DU Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
- Material categorization: for definitions of pliance please see .vishay./doc?99912