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V80100P - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Datasheet Summary

Features

  • TMBS®.
  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation 3 2 1.
  • Low thermal resistance.
  • Solder dip 260 °C, 40 s.
  • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

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Datasheet Details

Part number V80100P
Manufacturer Vishay
File Size 165.72 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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Full PDF Text Transcription

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www.DataSheet.co.kr New Product V80100P Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.425 V at IF = 10 A FEATURES TMBS® • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation 3 2 1 • Low thermal resistance • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. TO-247AD (TO-3P) PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 40 A TJ max. 80 A 100 V 500 A 0.
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