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www.vishay.com
V8P12
Vishay General Semiconductor
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.53 V at IF = 4 A
TMBS® eSMP® Series
K
1 2
TO-277A (SMPC)
K Cathode
Anode 1 Anode 2
FEATURES
• Very low profile - typical height of 1.1 mm
Available
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available - Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM EAS VF at IF = 8.0 A TJ max. Package
8.0 A 120 V 140 A 100 mJ 0.
V8P12 Datasheet
