Vishay V8P12
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
| Part No. | V8P12 |
|---|---|
| Datasheet | V8P12 Download |
| Manufacturer |  Vishay |
| Description | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
| Buy | Stock & Price |
FEATURES
● Very low profile - typical height of 1.1 mm Available● Ideal for automated placement
● Trench MOS Schottky technology
● Low forward voltage drop, low power losses
● High efficiency operation
● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
● AEC-Q101 qualified available - Automotive ordering code; base P/NHM3
● Material categorization: for definitions of compliance please see PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 8.0 A TJ max. Package 8.0 A 120 V 140 A 100 mJ 0.63 V 150 °C TO-277A (SMPC) Diode variations Single die
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection applications.MECHANICAL DATA
Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g.
