V8P12 - High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Vishay

Key Features

Very low profile - typical height of 1.1 mm Available.
Ideal for automated placement.
Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 PRIMA.

V8P12 high current density surface mount trench mos barrier schottky rectifier by Vishay - Datasheet Preview

Datasheet Details

Part number	V8P12
Manufacturer	Vishay
File Size	101.97 KB
Description	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet	V8P12 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com V8P12 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 4 A TMBS® eSMP® Series K 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 FEATURES • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 8.0 A TJ max. Package 8.0 A 120 V 140 A 100 mJ 0.