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V8P20
Vishay General Semiconductor
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.60 V at IF = 4 A
TMBS® eSMP® Series
K
1 2
SMPC (TO-277A)
K Cathode
Anode 1 Anode 2
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 8.0 A TJ max. Package
8.0 A 200 V 150 A 0.68 V 150 °C SMPC (TO-277A)
Circuit configuration
Single
FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C • Material categorization: for definitions of compliance
please see www.vishay.
V8P20 Datasheet
