V8PA12 - Trench MOS Barrier Schottky Rectifier

Datasheet Summary

Features

Very low profile - typical height of 0.95 mm.
Ideal for automated placement.
Trench MOS Schottky technology.
Low power losses, high efficiency.
Low forward voltage drop.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code: P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number	V8PA12
Manufacturer	Vishay
File Size	122.56 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V8PA12 Datasheet
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Full PDF Text Transcription

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www.vishay.com V8PA12 Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series Top View Bottom View SMPA (DO-221BC) Anode Cathode DESIGN SUPPORT TOOLS click logo to get started Models Available FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.

Published: Aug 6, 2019 |