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V8PAL45 - Surface Mount Trench MOS Barrier Schottky Rectifier

Features

  • Very low profile - typical height of 0.95 mm.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low power losses, high efficiency.
  • Low forward voltage drop.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 DESIGN.

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Datasheet Details

Part number V8PAL45
Manufacturer Vishay
File Size 130.15 KB
Description Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V8PAL45 Datasheet
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Full PDF Text Transcription

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www.vishay.com V8PAL45 Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series Top View Bottom View SMPA (DO-221BC) Anode Cathode FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 8.0 A VRRM IFSM VF at IF = 8.0 A (TA = 125 °C) 45 V 120 A 0.40 V TJ max.
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