V8PAM12 Overview
V8PAM12 Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series Top View Bottom View SMPA (DO-221BC) Anode Cathode.
V8PAM12 Key Features
- Very low profile
- typical height of 0.95 mm
- Ideal for automated placement
- Trench MOS Schottky technology
- Low power losses, high efficiency
- Low forward voltage drop
- Meets MSL level 1, per J-STD-020, LF maximum peak
- AEC-Q101 qualified available
- Automotive ordering code: P/NHM3
- Material categorization: for definitions of pliance