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V8PAM12 - Trench MOS Barrier Schottky Rectifier

Features

  • Very low profile - typical height of 0.95 mm.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low power losses, high efficiency.
  • Low forward voltage drop.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available - Automotive ordering code: P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 DESIGN.

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Datasheet Details

Part number V8PAM12
Manufacturer Vishay
File Size 122.84 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V8PAM12 Datasheet
Additional preview pages of the V8PAM12 datasheet.

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Full PDF Text Transcription

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www.vishay.com V8PAM12 Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series Top View Bottom View SMPA (DO-221BC) Anode Cathode FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.
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