Click to expand full text
www.vishay.com
V8PAN50-M3
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS® SMPATM
Top View
Bottom View
DO-221BC (SMPA)
PRIMARY CHARACTERISTICS
IF(AV)
8.0 A
VRRM IFSM VF at IF = 8.0 A (TA = 125 °C)
50 V 120 A 0.41 V
TJ max.
150 °C
Package
DO-221BC (SMPA)
Diode variation
Single die
FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C • Material categorization: for definitions of compliance
please see www.vishay.
V8PAN50-M3 Datasheet
