• Part: VB10170C-E3
  • Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 86.50 KB
VB10170C-E3 Datasheet (PDF) Download
Vishay
VB10170C-E3

Key Features

  • Trench MOS Schottky technology
  • Low forward voltage drop, low power losses
  • High efficiency operation
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
  • Material categorization: For definitions of pliance please see .vishay./doc?99912 VB10170C PIN 1 K PIN 2 HEATSINK