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VB10170C-E3 Datasheet Dual High Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: www.vishay.com VB10170C-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.

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Datasheet Details

Part number	VB10170C-E3
Manufacturer	Vishay
File Size	86.50 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Download	VB10170C-E3 Download (PDF)

Key Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 VB10170C PIN 1 K PIN 2.

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