VB20150S-M3
VB20150S-M3 is High-Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
.vishay.
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.55 V at IF = 5.0 A
TMBS ®
D2PAK (TO-263AB) K
A NC VB20150S
NC K
A HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package
Circuit configuration
20 A 150 V 160 A 0.75 V 150 °C D2PAK (TO-263AB) Single
Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
- Material categorization: for definitions of pliance please see .vishay./doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection.
MECHANICAL DATA Case: D2PAK (TO-263AB) Molding pound meets UL 94 V-0 flammability rating Base P/N-M3
- halogen-free, Ro HS-pliant, and mercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse...
