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VB20150S-M3
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.55 V at IF = 5.0 A
TMBS ®
D2PAK (TO-263AB) K
A NC VB20150S
NC K
A HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package
Circuit configuration
20 A 150 V 160 A 0.75 V 150 °C D2PAK (TO-263AB) Single
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C • Material categorization:
for definitions of compliance please see www.vishay.
VB20150S-M3 Datasheet
