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VB20150S-M3 Datasheet High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

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Datasheet Details

Part number VB20150S-M3
Manufacturer Vishay
File Size 97.42 KB
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Download VB20150S-M3 Download (PDF)

Overview

www.vishay.com VB20150S-M3 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5.0 A TMBS ® D2PAK (TO-263AB) K A NC VB20150S NC K A HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max.

Package Circuit configuration 20 A 150 V 160 A 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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