VB20150S-M3 Description
VB20150S-M3 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5.0 A TMBS ® D2PAK (TO-263AB) K A NC VB20150S NC K A HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package Circuit configuration 20 A 150 V 160 A 0.75 V 150 °C D2PAK (TO-263AB) Single.
VB20150S-M3 Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum
- Material categorization:
VB20150S-M3 Applications
- halogen-free, RoHS-pliant, and mercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whi