VBT1060C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

Part number	VBT1060C-M3
Manufacturer	Vishay
File Size	96.32 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VBT1060C-M3 Datasheet
Additional preview pages of the VBT1060C-M3 datasheet.

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📁 Similar Datasheet

VBT2045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VBT3045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VBT4045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VBT6045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VBTA1220N - N-Channel MOSFET (VBsemi)
VBTA1220NS - N-Channel MOSFET (VBsemi)
VBTA7322 - N-Channel MOSFET (VBsemi)

Other Datasheets by Vishay

Published: May 4, 2020 |