VBT1080C-M3 Description
VBT1080C-M3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A TMBS ® TO-263AB K 2 1 VBT1080C PIN 1 K PIN 2 HEATSINK.
VBT1080C-M3 Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum
- Material categorization: For definitions of pliance