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VBT1080C-M3 Datasheet Dual Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

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Overview

www.vishay.com VBT1080C-M3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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