Vishay VBT2045C
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
| Part No. | VBT2045C |
|---|---|
| Datasheet | VBT2045C Download |
| Manufacturer |  Vishay |
| Description | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier |
| Buy | Stock & Price |
FEATURES
● Trench MOS Schottky technology● Low forward voltage drop, low power losses
● High efficiency operation
● Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K
● Not recommended for PCB bottom side wave mounting
● Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 VBT2045C PIN 1 PIN 2 K HEATSINK
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 2 x 10 A 45 V 160 A 0.41 V 150 °CMECHANICAL DATA
Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum perMAXIMUM RATINGS
(TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.
