VBT4060C - Dual Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

Part number	VBT4060C
Manufacturer	Vishay
File Size	137.83 KB
Description	Dual Trench MOS Barrier Schottky Rectifier
Datasheet	VBT4060C Datasheet
Additional preview pages of the VBT4060C datasheet.

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K.
Not recommended for PCB bottom side wave mounting.
Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 VBT4060C PIN 1 PIN 2 K.

📁 Similar Datasheet

VBT4045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VBT2045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VBT3045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VBT6045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VBTA1220N - N-Channel MOSFET (VBsemi)
VBTA1220NS - N-Channel MOSFET (VBsemi)
VBTA7322 - N-Channel MOSFET (VBsemi)

Other Datasheets by Vishay

Published: Feb 2, 2012 |