VE2045C-E3 - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Features

Power pack.
Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	VE2045C-E3
Manufacturer	Vishay
File Size	118.04 KB
Description	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VE2045C-E3 Datasheet
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Full PDF Text Transcription

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www.vishay.com VE2045C-E3 Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A TMBS ® TO-220AB VE2045C 3 2 1 PIN 1 PIN 3 PIN 2 CASE FEATURES • Power pack • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, DC/DC converters, and polarity protection application. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A (TA = 125 °C) TJ max. Package 2 x 10 A 45 V 100 A 0.

Published: Aug 26, 2017 |