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VESD03A1B-HD1 - ESD Protection Diode

Key Features

  • Ultra compact LLP1006-2L package.
  • Low package height < 0.4 mm.
  • 1-line ESD protection.
  • Low leakage current < 0.5 μA.
  • Low load capacitance CD = 15 pF (VR = 2.5 V; f = 1 MHz).
  • ESD immunity acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge.
  • High surge current acc. IEC 61000-4-5 IPP > 3.5 A.
  • Soldering can be checked by standard vision inspection. No X-ray necessary.
  • Pin plating NiPdAu (e4) no whisker gr.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VESD03A1B-HD1 Vishay Semiconductors ESD Protection Diode in LLP1006-2L 21 20856 20855 MARKING (example only) XY Bar = cathode marking X = date code Y = type code (see table below) 21121 DESIGN SUPPORT TOOLS click logo to get started Models Available FEATURES • Ultra compact LLP1006-2L package • Low package height < 0.4 mm • 1-line ESD protection • Low leakage current < 0.5 μA • Low load capacitance CD = 15 pF (VR = 2.5 V; f = 1 MHz) • ESD immunity acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge • High surge current acc. IEC 61000-4-5 IPP > 3.5 A • Soldering can be checked by standard vision inspection. No X-ray necessary • Pin plating NiPdAu (e4) no whisker growth • e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn) • PATENT(S): www.vishay.