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VESD12A1C-HD1 - ESD Protection Diode

Key Features

  • Ultra compact LLP1006-2L package.
  • Low package height < 0.4 mm.
  • 1-line ESD protection.
  • Low leakage current < 0.01 μA.
  • Low load capacitance CD = 12.5 pF (VR = 6 V; f = 1 MHz).
  • ESD immunity acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge.
  • High surge current acc. IEC 61000-4-5 IPP > 4 A.
  • Soldering can be checked by standard vision inspection. No X-ray necessary.
  • Pin plating NiPdAu (e4) no whisker.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VESD12A1C-HD1 Vishay Semiconductors ESD Protection Diode in LLP1006-2L 21 20856 20855 MARKING (example only) XY 21121 Bar = cathode marking X = date code Y = type code (see table below) DESIGN SUPPORT TOOLS click logo to get started FEATURES • Ultra compact LLP1006-2L package • Low package height < 0.4 mm • 1-line ESD protection • Low leakage current < 0.01 μA • Low load capacitance CD = 12.5 pF (VR = 6 V; f = 1 MHz) • ESD immunity acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge • High surge current acc. IEC 61000-4-5 IPP > 4 A • Soldering can be checked by standard vision inspection. No X-ray necessary • Pin plating NiPdAu (e4) no whisker growth • PATENT(S): www.vishay.