VESD12A1C-HD1 Overview
VESD12A1C-HD1 Vishay Semiconductors ESD Protection Diode in LLP1006-2L 21 20856 20855 MARKING (example only) XY 21121 Bar = cathode marking X = date code Y = type code (see table below) DESIGN SUPPORT TOOLS click logo to get started.
VESD12A1C-HD1 Key Features
- Ultra pact LLP1006-2L package
- Low package height < 0.4 mm
- 1-line ESD protection
- Low leakage current < 0.01 μA
- Low load capacitance CD = 12.5 pF (VR = 6 V; f = 1 MHz)
- ESD immunity acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge
- High surge current acc. IEC 61000-4-5 IPP > 4 A
- Soldering can be checked by standard vision inspection
- Pin plating NiPdAu (e4) no whisker growth
- PATENT(S): .vishay./patents