VF10150S
VF10150S is High-Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
.Data Sheet.co.kr
New Product
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.59 V at IF = 5 A
TMBS ®
ITO-220AB
Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
- pliant to Ro HS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
1 VF10150S
PIN 1 PIN 2
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PIN 3
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 10 A 150 V 120 A 0.69 V 150 °C
MECHANICAL DATA
Case: ITO-220AB Molding pound meets UL 94 V-0 flammability rating Base P/N-M3
- halogen-free, Ro HS pliant, and mercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Isolation voltage from termal to heatsink t = 1 min Operating junction and storage temperature range SYMBOL VRRM IF(AV) IFSM d V/dt VAC TJ, TSTG VF10150S 150 10 120 10 000 1500
- 55 to + 150 UNIT V A A V/μs V °C
Document Number: 89267 Revision: 10-Nov-10
For technical questions within your region, please contact one of the following: Diodes Americas@vishay., Diodes Asia@vishay., Diodes Europe@vishay.
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