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VF10150S - High-Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 3.
  • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 definition 1 VF10150S PIN 1 PIN 2 2.

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Datasheet Details

Part number VF10150S
Manufacturer Vishay
File Size 135.70 KB
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VF10150S Datasheet
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Full PDF Text Transcription

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www.DataSheet.co.kr New Product VF10150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A TMBS ® ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 3 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 1 VF10150S PIN 1 PIN 2 2 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PIN 3 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 10 A 150 V 120 A 0.
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