VF20100R Datasheet | Vishay

.Data Sheet.co.kr New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TMBS ® ITO-220AB Features - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 - pliant to Ro HS directive 2002/95/EC and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition 1 VF20100R PIN 1 PIN 3 PIN 2 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 2 x 10 A 100 V 120 A 0.65 V 150 °C MECHANICAL DATA Case: ITO-220AB Molding pound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, Ro HS pliant, and mercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode IF(AV) IFSM d V/dt VAC TJ, TSTG SYMBOL VRRM VF20100R 100 20 A 10 120 10 000 1500 - 40 to + 150 A V/μs V °C UNIT V Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rating of change (rated VR) Isolation voltage from termal to heatsink t = 1 min Operating junction and storage temperature range Document Number: 89322 Revision: 10-Nov-10 For technical questions within your region, please contact one of the following: Diodes Americas@vishay., Diodes Asia@vishay., Diodes Europe@vishay. .vishay....