Datasheet4U Logo Datasheet4U.com

VF20150SG Datasheet High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

📥 Download Datasheet

Datasheet Details

Part number VF20150SG
Manufacturer Vishay
File Size 225.38 KB
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Download VF20150SG Download (PDF)

Overview

www.DataSheet.co.kr New Product V20150SG, VF20150SG, VB20150SG & VI20150SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation 2 V20150SG PIN 1 3 1 VF20150SG PIN 1 PIN 2 2 3.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package).
  • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

More Datasheets from Vishay

Part Number Description
VF20150SG-E3 High Voltage Trench MOS Barrier Schottky Rectifier
VF20150S High-Voltage Trench MOS Barrier Schottky Rectifier
VF20150S-E3 High Voltage Trench MOS Barrier Schottky Rectifier
VF20150C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VF20150C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
VF20100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VF20100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VF20100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
VF20100R Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VF20100S High-Voltage Trench MOS Barrier Schottky Rectifier